The Effect of Inductively Coupled Plasma Etching on the I – V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure - Université Côte d'Azur
Journal Articles Physica Status Solidi A (applications and materials science) Year : 2019

The Effect of Inductively Coupled Plasma Etching on the I – V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure

Xingzhao Wu
  • Function : Author
Lai Wang
  • Function : Author
Zhibiao Hao
  • Function : Author
Yanjun Han
  • Function : Author
Changzheng Sun
  • Function : Author
Bing Xiong
  • Function : Author
Jian Wang
  • Function : Author
  • PersonId : 737345
  • IdHAL : jian-wang
Hongtao Li
  • Function : Author
Yi Luo
  • Function : Author
Julien Brault
Université Côte d'Azur
Centre de recherche sur l'hétéroepitaxie et ses applications
Mohamed Al Khalfioui
  • Function : Author
Maud Nemoz
  • Function : Author
Mo Li
  • Function : Author
Jianbin Kang
  • Function : Author
Qian Li

Domains

Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci]

Julien Brault  : Connect in order to contact the contributor

https://hal.science/hal-03035090

Submitted on : Wednesday, December 2, 2020-8:47:51 AM

Last modification on : Tuesday, September 24, 2024-4:46:17 PM

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hal-03035090 , version 1 (02-12-2020)

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Xingzhao Wu, Lai Wang, Zhibiao Hao, Yanjun Han, Changzheng Sun, et al.. The Effect of Inductively Coupled Plasma Etching on the I – V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure. Physica Status Solidi A (applications and materials science), 2019, 216 (24), pp.1900655. ⟨10.1002/pssa.201900655⟩. ⟨hal-03035090⟩

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