The Effect of Inductively Coupled Plasma Etching on the I – V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure - Université Côte d'Azur Access content directly
Journal Articles physica status solidi (a) Year : 2019

The Effect of Inductively Coupled Plasma Etching on the I – V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure

Xingzhao Wu
  • Function : Author
Lai Wang
  • Function : Author
Zhibiao Hao
  • Function : Author
Yanjun Han
  • Function : Author
Changzheng Sun
  • Function : Author
Bing Xiong
  • Function : Author
Jian Wang
  • Function : Author
  • PersonId : 737345
  • IdHAL : jian-wang
Hongtao Li
  • Function : Author
Yi Luo
  • Function : Author
Mohamed Al Khalfioui
  • Function : Author
Maud Nemoz
  • Function : Author
Mo Li
  • Function : Author
Jianbin Kang
  • Function : Author
Qian Li
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Dates and versions

hal-03035090 , version 1 (02-12-2020)

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Xingzhao Wu, Lai Wang, Zhibiao Hao, Yanjun Han, Changzheng Sun, et al.. The Effect of Inductively Coupled Plasma Etching on the I – V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure. physica status solidi (a), 2019, 216 (24), pp.1900655. ⟨10.1002/pssa.201900655⟩. ⟨hal-03035090⟩
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